STMicroelectronics STGSB200M65DF2AG, NPN-Channel Single IGBT, 216 A 650 V, 9-Pin ECOPACK, Surface
- RS庫存編號:
- 273-5094P
- 製造零件編號:
- STGSB200M65DF2AG
- 製造商:
- STMicroelectronics
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享受批量購買折扣
額外添加50件可節省1%
查看批量定價選項小計 10 件 (按連續帶提供)*
TWD6,540.00
(不含稅)
TWD6,867.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 200 個，準備發貨
單位 | 每單位 | 節省 |
|---|---|---|
| 10 - 49 | TWD654.00 | - |
| 50 - 99 | TWD642.00 | 1% |
| 100 - 149 | TWD628.00 | 3% |
| 150 + | TWD616.00 | 5% |
* 參考價格
- RS庫存編號:
- 273-5094P
- 製造零件編號:
- STGSB200M65DF2AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 216A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 714W | |
| Configuration | Single | |
| Package Type | ECOPACK | |
| Mount Type | Surface | |
| Channel Type | NPN | |
| Pin Count | 9 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4mm | |
| Standards/Approvals | UL1557 | |
| Height | 5.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 216A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 714W | ||
Configuration Single | ||
Package Type ECOPACK | ||
Mount Type Surface | ||
Channel Type NPN | ||
Pin Count 9 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Operating Temperature 175°C | ||
Length 4mm | ||
Standards/Approvals UL1557 | ||
Height 5.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Tight parameter distribution
Low thermal resistance
Dice on direct bond copper (DBC) substrate
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