STMicroelectronics STGSB200M65DF2AG, NPN-Channel Single IGBT, 200 A 650 V, 9-Pin ECOPACK, Surface Mount
- RS庫存編號:
- 273-5093
- 製造零件編號:
- STGSB200M65DF2AG
- 製造商:
- STMicroelectronics
可享批量折扣
小計(1 卷,共 200 件)*
TWD121,520.00
(不含稅)
TWD127,596.00
(含稅)
添加 200 件 件可免費送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 200 - 200 | TWD607.60 | TWD121,520.00 |
| 400 - 400 | TWD595.40 | TWD119,080.00 |
| 600 + | TWD583.50 | TWD116,700.00 |
* 參考價格
- RS庫存編號:
- 273-5093
- 製造零件編號:
- STGSB200M65DF2AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 714 W | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | ECOPACK | |
| Mounting Type | Surface Mount | |
| Channel Type | NPN | |
| Pin Count | 9 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 714 W | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type ECOPACK | ||
Mounting Type Surface Mount | ||
Channel Type NPN | ||
Pin Count 9 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Tight parameter distribution
Low thermal resistance
Dice on direct bond copper (DBC) substrate
Low thermal resistance
Dice on direct bond copper (DBC) substrate
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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