Infineon IGBT, 50 A 1200 V, 3-Pin TO-247
- RS庫存編號:
- 260-5096
- 製造零件編號:
- IKQ50N120CT2XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,538.00
(不含稅)
TWD5,814.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 180 件從 2026年3月25日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD184.60 | TWD5,538.00 |
| 120 - 210 | TWD180.90 | TWD5,427.00 |
| 240 - 450 | TWD177.30 | TWD5,319.00 |
| 480 - 1170 | TWD173.70 | TWD5,211.00 |
| 1200 + | TWD170.30 | TWD5,109.00 |
* 參考價格
- RS庫存編號:
- 260-5096
- 製造零件編號:
- IKQ50N120CT2XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 652W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Switching Speed | 10μs | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.9 mm | |
| Series | TRENCHSTOPTM2 | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS | |
| Length | 41.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 652W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Switching Speed 10μs | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Maximum Operating Temperature 175°C | ||
Width 15.9 mm | ||
Series TRENCHSTOPTM2 | ||
Height 5.1mm | ||
Standards/Approvals RoHS | ||
Length 41.2mm | ||
Automotive Standard No | ||
The Infineon hard switching TRENCHSTOP performance IGBT2 with soft, fast recovery full current rated anti-parallel emitter controlled diode in TO-247PLUS package for higher current capability.
Very soft, fast recovery full current anti parallel diode
Maximum junction temperature is 175°C