可享批量折扣
小計（1 托盤，共 10 件）*
TWD33,977.00
(不含稅)
TWD35,675.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | TWD3,397.70 | TWD33,977.00 |
| 20 + | TWD3,329.70 | TWD33,297.00 |
* 參考價格
- RS庫存編號:
- 253-9838
- 製造零件編號:
- FP75R12N3T7B11BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 62.5 mm | |
| Series | FP75R12N3T7B11B | |
| Height | 17mm | |
| Length | 122mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 62.5 mm | ||
Series FP75R12N3T7B11B | ||
Height 17mm | ||
Length 122mm | ||
Automotive Standard No | ||
The Infineon FP75 series is a EconoPIM 3 module with IGBT and emitter controlled diode and PressFIT or NTC.
Overload operation up to 175°C
Low VCEsat
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
PressFIT contact technology
Standard housing
相關連結
- Infineon FP75R12N3T7B11BPSA1 IGBT 1200 V
- Infineon IGBT 1200 V
- Infineon FS150R12N2T7B54BPSA1 IGBT 1200 V
- Infineon FS150R12N2T7B15BPSA1 IGBT 1200 V
- Infineon FP75R12N3T7BPSA1 IGBT 1200 V
- Infineon FS100R12N2T7B15BPSA1 IGBT 1200 V
- Infineon FF600R12ME4WB73BPSA1 IGBT 1200 V
- Infineon FP100R12N2T7B11BPSA1 IGBT 1200 V