STMicroelectronics IGBT, 50 A 1.2 kV, 3-Pin, Through Hole
- RS庫存編號:
- 248-4896P
- 製造零件編號:
- STGYA50M120DF3
- 製造商:
- STMicroelectronics
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- 加上 41 件從 2026年11月09日 起發貨
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* 參考價格
- RS庫存編號:
- 248-4896P
- 製造零件編號:
- STGYA50M120DF3
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS | |
| Width | 21.1mm | |
| Series | STGYA50M120DF3 | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals RoHS | ||
Width 21.1mm | ||
Series STGYA50M120DF3 | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
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