Infineon FP50R06W2E3BOMA1 IGBT Module 600 V
- RS庫存編號:
- 244-5401
- 製造零件編號:
- FP50R06W2E3BOMA1
- 製造商:
- Infineon
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| 1 - 1 | TWD1,742.00 |
| 2 - 2 | TWD1,706.00 |
| 3 - 3 | TWD1,672.00 |
| 4 - 4 | TWD1,640.00 |
| 5 + | TWD1,528.00 |
* 參考價格
- RS庫存編號:
- 244-5401
- 製造零件編號:
- FP50R06W2E3BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 175W | |
| Number of Transistors | 7 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 51mm | |
| Height | 12mm | |
| Series | FP50R06W2E3B | |
| Standards/Approvals | RoHS | |
| Width | 42.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 175W | ||
Number of Transistors 7 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 51mm | ||
Height 12mm | ||
Series FP50R06W2E3B | ||
Standards/Approvals RoHS | ||
Width 42.5mm | ||
Automotive Standard No | ||
Infineon FP50R06W2E3B Series IGBT Module, 175W Maximum Power Dissipation, 600V Maximum Collector‑Emitter Voltage - FP50R06W2E3BOMA1
This IGBT module is a Compact power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power systems. It provides robust switching capability for converters, inverters and motor drives while operating across a wide thermal range in demanding environments. The device is RoHS-compliant and intended for applications that require multiple transistor outputs within a single package.
Features and Benefits:
• 600 V collector-emitter rating enables high-voltage switching capability
• 175 W maximum power dissipation supports substantial continuous load handling
• 1.9 V maximum VCE(sat) reduces conduction losses during on-state operation
• Gate-emitter tolerance of 20 V permits standard gate-drive voltages
• Seven transistors in one package allow multi-channel switching arrangements
• 175 W maximum power dissipation supports substantial continuous load handling
• 1.9 V maximum VCE(sat) reduces conduction losses during on-state operation
• Gate-emitter tolerance of 20 V permits standard gate-drive voltages
• Seven transistors in one package allow multi-channel switching arrangements
Applications
• Suitable for three-phase motor inverter stages requiring multiple switches
• Ideal for industrial DC-DC converters with high-voltage inputs
• Used with power rectifiers in medium-power traction systems
• Can be used for renewable-energy inverters handling variable loads
• Suitable for laboratory or test rigs needing clustered transistor outputs
• Ideal for industrial DC-DC converters with high-voltage inputs
• Used with power rectifiers in medium-power traction systems
• Can be used for renewable-energy inverters handling variable loads
• Suitable for laboratory or test rigs needing clustered transistor outputs
What ambient temperatures can the device tolerate during operation?
It is rated to operate down to −40 °C and up to 150 °C.
What is the package footprint for integration on assemblies?
The unit measures 42.5 x 51 x 12 mm for Compact mounting and footprint planning.
How does the seven-transistor arrangement affect circuit layout?
Multiple transistors in one housing reduce interconnection length and simplify gate routing for multi-leg topologies.
Are there restrictions on automotive use?
The device is not specified to automotive standards and should not be relied upon for automotive-qualified designs.
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