Infineon IGU04N60TAKMA1, Type N-Channel IGBT, 4 A 600 V TO-251
- RS庫存編號:
- 244-0897
- 製造零件編號:
- IGU04N60TAKMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 244-0897
- 製造零件編號:
- IGU04N60TAKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 4A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 42W | |
| Package Type | TO-251 | |
| Channel Type | Type N | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 4A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 42W | ||
Package Type TO-251 | ||
Channel Type Type N | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
Infineon IGBT, 4A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IGU04N60TAKMA1
This IGBT is a highly efficient transistor designed for use in demanding applications. With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 4A, this TO-251 IGBT module excels in performance. The compact dimensions of 6.6 x 6.1 x 0.09 mm make it suitable for a variety of setups while operating effectively within a temperature range from -40°C to +175°C.
Features & Benefits
• Very low saturation voltage enhances energy efficiency
• Short-circuit withstand time of 5μs increases reliability
• High switching speed optimises system performance
• Low gate charge reduces driver power requirements
• Excellent thermal stability ensures consistent operation
• Tight parameter distribution enhances design flexibility
Applications
• Utilised in frequency inverters for efficient energy conversion
• Ideal for electric motor drives in industrial settings
• Effective in power supply where space is limited
• Suitable for renewable energy systems requiring high efficiency
• Designed for various automation demanding reliability
What are the key electrical characteristics of this IGBT?
This device features a maximum collector-emitter voltage of 600V and a continuous collector current of 4A, making it suitable for high power applications. Its maximum power dissipation is rated at 42W, allowing it to handle substantial load demands effectively.
How does the gate-emitter voltage range impact usability?
The gate-emitter voltage range of ±20V provides flexibility in driving configurations, allowing integration with a variety of control circuits while maintaining stable operation in diverse conditions.
What are the benefits of the thermal resistance specifications?
With a thermal resistance of 3.5 K/W between junction and case, this IGBT ensures efficient heat management, allowing prolonged operation at high temperatures without performance degradation, which is essential for high-power applications.
What makes this IGBT suitable for harsh environments?
The device operates between -40°C and +175°C, ensuring reliability in extreme temperatures, which is crucial for industrial applications exposed to varying environmental conditions.