Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3.3 kV AG-IHVB130
- RS庫存編號:
- 236-5199P
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計 2 件 (以盤裝提供)*
TWD76,176.00
(不含稅)
TWD79,984.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5 件從 2026年10月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 2 + | TWD38,088.00 |
* 參考價格
- RS庫存編號:
- 236-5199P
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 825A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 3.3kV | |
| Maximum Power Dissipation Pd | 2400kW | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 109.9mm | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 825A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 3.3kV | ||
Maximum Power Dissipation Pd 2400kW | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 109.9mm | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Height 16.4mm | ||
Automotive Standard No | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density
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