Infineon, Type N-Channel IGBT, 15 A 1200 V, 23-Pin EasyPIM, Clamp
- RS庫存編號:
- 226-6056
- 製造零件編號:
- FP15R12W1T7B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 24 件）*
TWD23,709.60
(不含稅)
TWD24,895.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月30日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 24 - 96 | TWD987.90 | TWD23,709.60 |
| 120 + | TWD968.10 | TWD23,234.40 |
* 參考價格
- RS庫存編號:
- 226-6056
- 製造零件編號:
- FP15R12W1T7B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 15A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | EasyPIM | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 23 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | FP15 | |
| Height | 12mm | |
| Length | 33.8mm | |
| Width | 62.8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 15A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type EasyPIM | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 23 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series FP15 | ||
Height 12mm | ||
Length 33.8mm | ||
Width 62.8 mm | ||
Automotive Standard No | ||
The Infineon 15 A PIM IGBT module has higher power density and also has lower system cost. It has low on state voltage VCEsat and Vf.
Enhanced controllability of dv/dt
Optimized switching losses for dv/dt 5kV/μs
8 μs short-circuit robustness