STMicroelectronics STGIPQ4C60T-HZ IGBT, 6 A 600 V, 26-Pin N2DIP-26L type Z
- RS庫存編號:
- 218-4825
- 製造零件編號:
- STGIPQ4C60T-HZ
- 製造商:
- STMicroelectronics
可享批量折扣
小計(1 件)*
TWD264.00
(不含稅)
TWD277.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月02日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 3 | TWD264.00 |
| 4 - 7 | TWD257.00 |
| 8 + | TWD253.00 |
* 參考價格
- RS庫存編號:
- 218-4825
- 製造零件編號:
- STGIPQ4C60T-HZ
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 6 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 600V | |
| Maximum Power Dissipation | 12.5 W | |
| Number of Transistors | 6 | |
| Package Type | N2DIP-26L type Z | |
| Pin Count | 26 | |
| Transistor Configuration | Series | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 6 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 600V | ||
Maximum Power Dissipation 12.5 W | ||
Number of Transistors 6 | ||
Package Type N2DIP-26L type Z | ||
Pin Count 26 | ||
Transistor Configuration Series | ||
SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V, short-circuit rugged IGBT
This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and more easily screwed-on heat sink, and is optimized for thermal performance and compactness in built-in motor applications or other low power applications where assembly space is limited. This IPM includes a completely uncommitted operational amplifier and a comparator that can be used to design a fast and efficient protection circuit.
- IPM 6 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
- 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
- Internal bootstrap diode
- Optimized for low electromagnetic interference
- Undervoltage lockout
- Short-circuit rugged TFS IGBT
- Shutdown function
- Interlocking function
- Op-amp for advanced current sensing
- Comparator for fault protection against overcurrent
- Isolation ratings of 1500 Vrms/min.
- NTC (UL 1434 CA 2 and 4)
- Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
- UL recognition: UL 1557, file E81734
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
- STMicroelectronics STGIPQ4C60T-HZ IGBT 26-Pin N2DIP-26L type Z
- STMicroelectronics STGIPNS4C60T-H IGBT 26-Pin NSDIP-26L, Surface Mount
- STMicroelectronics STGIB10CH60TS-XZ 3 Phase IGBT 26-Pin SDIP2B-26L type X, Surface Mount
- STMicroelectronics STGIF7CH60TS-LZ 3 Phase IGBT 26-Pin SDIP2F-26L type L, Surface Mount
- STMicroelectronics STGIB15CH60TS-X IGBT Module 600 V SDIP2B-26L type X, Through Hole
- STMicroelectronics SLLIMM 2nd Type N-Channel MOSFET 600 V, 26-Pin SDIP2B-26L Type Z1 STIB1560DM2-Z
- Infineon IGP15N60TXKSA1 Single IGBT, 26 A 600 V TO-220-3
- Infineon IGB15N60TATMA1 IGBT 3-Pin PG-TO263-3
