Infineon FP35R12KT4B11BOSA1, Type N-Channel IGBT Module, 35 A 1200 V, 23-Pin ECONO2, Clamp
- RS庫存編號:
- 124-8795
- 製造零件編號:
- FP35R12KT4B11BOSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 盒，共 10 件）*
TWD27,078.00
(不含稅)
TWD28,431.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 10 - 10 | TWD2,707.80 | TWD27,078.00 |
| 20 - 30 | TWD2,626.50 | TWD26,265.00 |
| 40 + | TWD2,547.70 | TWD25,477.00 |
* 參考價格
- RS庫存編號:
- 124-8795
- 製造零件編號:
- FP35R12KT4B11BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 35A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | ECONO2 | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 23 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 17mm | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 35A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 210W | ||
Package Type ECONO2 | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 23 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 17mm | ||
Length 107.5mm | ||
Width 45 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.