Starpower DG75A08TDFQ, N-Channel IGBT Discrete, 100 A, 4-Pin TO-247PLUS-4L
- RS庫存編號:
- 427-754
- 製造零件編號:
- DG75A08TDFQ
- 製造商:
- Starpower
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD278.00
(不含稅)
TWD291.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 30 件從 2026年6月08日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD139.00 | TWD278.00 |
| 20 - 198 | TWD125.00 | TWD250.00 |
| 200 - 998 | TWD115.50 | TWD231.00 |
| 1000 - 1998 | TWD107.00 | TWD214.00 |
| 2000 + | TWD87.00 | TWD174.00 |
* 參考價格
- RS庫存編號:
- 427-754
- 製造零件編號:
- DG75A08TDFQ
- 製造商:
- Starpower
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Starpower | |
| Product Type | IGBT Discrete | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Power Dissipation Pd | 378W | |
| Package Type | TO-247PLUS-4L | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 30ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | DOSEMI | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Starpower | ||
Product Type IGBT Discrete | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Power Dissipation Pd 378W | ||
Package Type TO-247PLUS-4L | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 30ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series DOSEMI | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode
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