onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS庫存編號:
- 277-076
- 製造零件編號:
- FGY4L100T120SWD
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD432.00
(不含稅)
TWD453.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 20 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD432.00 |
| 10 - 99 | TWD389.00 |
| 100 - 499 | TWD359.00 |
| 500 - 999 | TWD333.00 |
| 1000 + | TWD298.00 |
* 參考價格
- RS庫存編號:
- 277-076
- 製造零件編號:
- FGY4L100T120SWD
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Number of Transistors | 1 | |
| Configuration | Common Emitter | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Width | 5 mm | |
| Height | 22.54mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1.07kW | ||
Number of Transistors 1 | ||
Configuration Common Emitter | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Width 5 mm | ||
Height 22.54mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
相關連結
- onsemi FGY4L140T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L75T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L160T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- Infineon IKQ100N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon IKQ140N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon FS50R12W1T7B11BOMA1 Common Emitter IGBT Panel Mount
- ROHM RGA80TRX2EHRC15 IGBT 4-Pin TO-247-4L, Through Hole
- ROHM RGA80TRX2HRC15 IGBT 4-Pin TO-247-4L, Through Hole