Transcend MTE670T-I M.2 (2280) Internal SSD

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TWD6,022.00

(不含稅)

TWD6,323.10

(含稅)

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RS庫存編號:
262-9677
製造零件編號:
TS128GMTE670T-I
製造商:
Transcend
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品牌

Transcend

Product Type

SSD

Model Number

MTE670T-I

Internal/External

Internal

Form Factor

M.2 (2280)

Industrial Grade

Yes

NAND Type

3D TLC

Self-Destruct

No

Interface Type

PCIe Gen 3.0 x4 NVMe

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Width

2.23mm

Height

22mm

Length

80mm

豁免

Transcend Solid State Drive, 128GB Capacity, NVMe PCIe Gen 3 x 4 Interface - TS128GMTE670T-I


This solid state drive delivers high-speed data transfer and efficiency. With a compact M.2 form factor measuring 80mm x 22mm x 2.23mm, it is designed for internal SSD storage in various devices. The drive's capacity stands at 128GB, making it ideal for applications requiring rapid access to data.

Features & Benefits


• Utilises advanced 112-layer 3D NAND technology for improved efficiency

• Delivers sequential read speeds of up to 2,100 MB/s

• Endurance rating of 3K Programme/Erase cycles for reliability

• Supports extended operating temperatures from -40°C to 85°C

• Implements built-in LDPC ECC functionality for data integrity

• Space-saving M.2 form factor optimised for mobile devices

Applications


• Ideal for automation systems requiring rapid data processing

• Suitable for electronics in high-temperature environments

• Utilised in mechanical systems that demand compact SSD solutions

• Employed in industrial settings for reliable data storage

What are the operational temperature limits for optimal performance?


The device functions effectively in temperatures ranging from -40°C to 85°C, ensuring reliability in extreme conditions.

How does the drive's endurance rating impact long-term usage?


With a rating of 3K Programme/Erase cycles, it ensures durability for frequent data writing and rewriting without significant degradation.

What benefits does the 3D NAND flash technology offer?


The 3D NAND technology enhances storage density, allowing for faster performance and improved power efficiency compared to traditional flash memory.

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