製造零件編號

Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

RS庫存編號:: 264-3550
製造零件編號:: HIP2210FRTZ
製造商:: Renesas Electronics

Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

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小計（1 包，共 5 件）*

TWD269.00

(不含稅)

TWD282.45

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單位	每單位	每包*
5 - 20	TWD53.80	TWD269.00
25 - 45	TWD46.20	TWD231.00
50 - 95	TWD45.00	TWD225.00
100 - 245	TWD44.00	TWD220.00
250 +	TWD43.00	TWD215.00

* 參考價格

RS庫存編號:: 264-3550
製造零件編號:: HIP2210FRTZ
製造商:: Renesas Electronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	Renesas Electronics
	Product Type	Gate Driver Module
	Output Current	1.69mA
	Pin Count	10
	Package Type	SOIC
	Fall Time	790ns
	Driver Type	MOSFET
	Rise Time	20ns
	Minimum Supply Voltage	100V
	Maximum Supply Voltage	100V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Standards/Approvals	RoHS
	Width	4 mm
	Length	5mm
	Series	HIP2210
	Height	1.75mm
	Automotive Standard	No

	選取全部
	品牌 Renesas Electronics
	Product Type Gate Driver Module
	Output Current 1.69mA
	Pin Count 10
	Package Type SOIC
	Fall Time 790ns
	Driver Type MOSFET
	Rise Time 20ns
	Minimum Supply Voltage 100V
	Maximum Supply Voltage 100V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Standards/Approvals RoHS
	Width 4 mm
	Length 5mm
	Series HIP2210
	Height 1.75mm
	Automotive Standard No

Datasheet - HIP2210FRTZ

COO (Country of Origin):: MY

The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to

18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.

Integrated 0.5Ω typical bootstrap diode

Robust noise tolerance

VDD and boot undervoltage lockout

Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

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