製造零件編號

Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC

RS庫存編號:: 264-0588
製造零件編號:: HIP2101EIBZ
製造商:: Renesas Electronics

Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 管，共 980 件）*

TWD89,670.00

(不含稅)

TWD94,158.40

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月10日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
980 +	TWD91.50	TWD89,670.00

* 參考價格

RS庫存編號:: 264-0588
製造零件編號:: HIP2101EIBZ
製造商:: Renesas Electronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Renesas Electronics
	Product Type	Gate Driver Module
	Output Current	3A
	Pin Count	8
	Package Type	SOIC
	Fall Time	10ns
	Driver Type	MOSFET
	Rise Time	10ns
	Minimum Supply Voltage	100V
	Maximum Supply Voltage	100V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Height	1.7mm
	Standards/Approvals	RoHS
	Width	3.98 mm
	Series	HIP2101
	Automotive Standard	No

	選取全部
	品牌 Renesas Electronics
	Product Type Gate Driver Module
	Output Current 3A
	Pin Count 8
	Package Type SOIC
	Fall Time 10ns
	Driver Type MOSFET
	Rise Time 10ns
	Minimum Supply Voltage 100V
	Maximum Supply Voltage 100V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Height 1.7mm
	Standards/Approvals RoHS
	Width 3.98 mm
	Series HIP2101
	Automotive Standard No

Datasheet - HIP2101EIBZ

The Renesas Electronics gate drivers is a high frequency half-bridge NMOS FET driver with a tri-level PWM input with an operating supply and integrated high-side bootstrap bias, it supports driving the high-side and low-side NMOS in halfbridge applications.

Programmable dead-time prevents shoot-through

Bi-directional converter

Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC

訂單超過 $1,300.00 免費送貨

相關連結