Infineon TDA21520AUMA1 MOSFET Gate Driver, 20 A 25-Pin 16 V, PQFN
- RS庫存編號:
- 258-4042
- 製造零件編號:
- TDA21520AUMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD185.00
(不含稅)
TWD194.24
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月16日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD92.50 | TWD185.00 |
| 10 - 98 | TWD83.50 | TWD167.00 |
| 100 - 248 | TWD77.50 | TWD155.00 |
| 250 - 498 | TWD68.00 | TWD136.00 |
| 500 + | TWD65.00 | TWD130.00 |
* 參考價格
- RS庫存編號:
- 258-4042
- 製造零件編號:
- TDA21520AUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 20A | |
| Pin Count | 25 | |
| Package Type | PQFN | |
| Driver Type | MOSFET | |
| Minimum Supply Voltage | 4.25V | |
| Maximum Supply Voltage | 16V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | Lead free RoHS package | |
| Series | TDA21520 | |
| Length | 4mm | |
| Width | 5 mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver | ||
Output Current 20A | ||
Pin Count 25 | ||
Package Type PQFN | ||
Driver Type MOSFET | ||
Minimum Supply Voltage 4.25V | ||
Maximum Supply Voltage 16V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals Lead free RoHS package | ||
Series TDA21520 | ||
Length 4mm | ||
Width 5 mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power stage is integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low Vsd similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages. The internal MOSFET sensing achieves superior current sense accuracy vs best-in-class controller-based Inductor DCR sense methods.
High-side MOSFET short detection and flag
Thermal shutdown
Cycle-by-cycle over current protection and fault flag
Auto-sleep and deep-sleep mode for power saving
Compatible with 3.3-V tristate PWM input
Accurate current reporting to improve system level performance
Current and temperature fault monitoring for a more robust system
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