Infineon IRS2113STRPBF High Side Gate Driver, 2 A 16-Pin 20 V, SOIC
- RS庫存編號:
- 258-4006
- 製造零件編號:
- IRS2113STRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD151.00
(不含稅)
TWD158.56
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月08日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD75.50 | TWD151.00 |
| 10 - 98 | TWD68.00 | TWD136.00 |
| 100 - 248 | TWD64.50 | TWD129.00 |
| 250 - 498 | TWD55.50 | TWD111.00 |
| 500 + | TWD53.00 | TWD106.00 |
* 參考價格
- RS庫存編號:
- 258-4006
- 製造零件編號:
- IRS2113STRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 2A | |
| Pin Count | 16 | |
| Package Type | SOIC | |
| Fall Time | 17ns | |
| Driver Type | High Side | |
| Rise Time | 25ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver Module | ||
Output Current 2A | ||
Pin Count 16 | ||
Package Type SOIC | ||
Fall Time 17ns | ||
Driver Type High Side | ||
Rise Time 25ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600 V.
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ± 5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
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