Infineon MOSFET Gate Driver, 360 mA 8-Pin 600 V, SOIC

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小計（1 卷，共 2500 件）*

TWD60,500.00

(不含稅)

TWD63,525.00

(含稅)

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2500 - 2500TWD24.20TWD60,500.00
5000 +TWD23.50TWD58,750.00

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RS庫存編號:
244-9741
製造零件編號:
IR2102STRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET & IGBT Driver

Output Current

360mA

Pin Count

8

Fall Time

90ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

100ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

IR2101(S)/IR2102(S)

Automotive Standard

No

The Infineon Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices.These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. This makes driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN, and CoolSiC. That’s why Infineon offers more than 500 EiceDRIVER gate driver IC solutions suitable for any power switch, and any application.

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 10 to 20V

Undervoltage lockout

3.3V, 5V, and 15V logic input compatible

Matched propagation delay for both channels

Outputs in phase with inputs (IR2101) or out of

phase with inputs (IR2102)

Also available LEAD-FREE

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