onsemi NCV57081CDR2G MOSFET Gate Driver 8-Pin 22 V, SOIC
- RS庫存編號:
- 244-9167
- 製造零件編號:
- NCV57081CDR2G
- 製造商:
- onsemi
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可享批量折扣
小計(1 件)*
TWD162.00
(不含稅)
TWD170.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月29日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD162.00 |
| 10 - 99 | TWD158.00 |
| 100 - 249 | TWD155.00 |
| 250 - 499 | TWD152.00 |
| 500 + | TWD148.00 |
* 參考價格
- RS庫存編號:
- 244-9167
- 製造零件編號:
- NCV57081CDR2G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Pin Count | 8 | |
| Fall Time | 13ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 30ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | NCV57 | |
| Mount Type | PCB | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Pin Count 8 | ||
Fall Time 13ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 30ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series NCV57 | ||
Mount Type PCB | ||
Automotive Standard No | ||
The ON Semiconductor high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow−body SOIC−8 package.
High Peak Output Current (+6.5 A/−6.5 A)
Low Clamp Voltage Drop Eliminates the Need of Negative Power
Supply to Prevent Spurious Gate Turn−on (Version A)
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2 (Version B)
3.3 V, 5 V, and 15 V Logic Input
3.75 kVRMS VISO (I−O) (to meet UL1577 Requirements)
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