onsemi MOSFET Gate Driver 1, 6.5 A 8-Pin 22 V, SOIC

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TWD51,700.00

(不含稅)

TWD54,280.00

(含稅)

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1000 - 1000TWD51.70TWD51,700.00
2000 +TWD50.60TWD50,600.00

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RS庫存編號:
233-6841
製造零件編號:
NCV57090FDWR2G
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

8

Package Type

SOIC

Fall Time

13ns

Number of Outputs

5

Driver Type

MOSFET

Rise Time

13ns

Minimum Supply Voltage

22V

Number of Drivers

1

Maximum Supply Voltage

22V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

7.6mm

Standards/Approvals

No

Width

6.05 mm

Series

NCx57090y

Height

2.65mm

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor NCV57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

It has High peak output current (+6.5 A/−6.5 A)

It provides short propagation delays with accurate matching

It offers IGBT/MOSFET gate clamping during short circuit

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