onsemi NCD57090FDWR2G MOSFET Gate Driver 1, 6.5 A 8-Pin 22 V, SOIC
- RS庫存編號:
- 233-6803
- 製造零件編號:
- NCD57090FDWR2G
- 製造商:
- onsemi
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小計（1 包，共 2 件）*
TWD190.00
(不含稅)
TWD199.50
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD95.00 | TWD190.00 |
| 10 - 98 | TWD93.50 | TWD187.00 |
| 100 - 248 | TWD90.50 | TWD181.00 |
| 250 - 498 | TWD88.50 | TWD177.00 |
| 500 + | TWD87.00 | TWD174.00 |
* 參考價格
- RS庫存編號:
- 233-6803
- 製造零件編號:
- NCD57090FDWR2G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 13ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Minimum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Series | NCD57090 | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 13ns | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Minimum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Series NCD57090 | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.
It has High peak output current (+6.5 A/−6.5 A)
It provides short propagation delays with accurate matching
It offers IGBT/MOSFET gate clamping during short circuit
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