onsemi NCD57090FDWR2G MOSFET Gate Driver 1, 6.5 A 8-Pin 22V, SOIC

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TWD190.00

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TWD199.50

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每單位
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2 - 8TWD95.00TWD190.00
10 - 98TWD93.50TWD187.00
100 - 248TWD90.50TWD181.00
250 - 498TWD88.50TWD177.00
500 +TWD87.00TWD174.00

* 參考價格

包裝方式:
RS庫存編號:
233-6803
製造零件編號:
NCD57090FDWR2G
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

8

Package Type

SOIC

Fall Time

13ns

Driver Type

MOSFET

Minimum Supply Voltage

22V

Maximum Supply Voltage

22V

Number of Drivers

1

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

5mm

Series

NCD57090

Height

1.75mm

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

It has High peak output current (+6.5 A/−6.5 A)

It provides short propagation delays with accurate matching

It offers IGBT/MOSFET gate clamping during short circuit

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