Infineon Gate Driver, 20 A 20-Pin 5.5 V, DSO
- RS庫存編號:
- 232-3034
- 製造零件編號:
- 1EDI3031ASXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD89,900.00
(不含稅)
TWD94,400.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD89.90 | TWD89,900.00 |
| 2000 + | TWD88.10 | TWD88,100.00 |
* 參考價格
- RS庫存編號:
- 232-3034
- 製造零件編號:
- 1EDI3031ASXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 20 | |
| Fall Time | 45ns | |
| Package Type | DSO | |
| Driver Type | General Purpose | |
| Rise Time | 55ns | |
| Minimum Supply Voltage | 5.5V | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.5mm | |
| Series | 1EDI3031AS | |
| Width | 6.4 mm | |
| Standards/Approvals | No | |
| Height | 2.65mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 20 | ||
Fall Time 45ns | ||
Package Type DSO | ||
Driver Type General Purpose | ||
Rise Time 55ns | ||
Minimum Supply Voltage 5.5V | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 7.5mm | ||
Series 1EDI3031AS | ||
Width 6.4 mm | ||
Standards/Approvals No | ||
Height 2.65mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The Infineon has automotive qualified single channel high voltage gate driver optimized for SiC MOSFET. The 1EDI3031AS uses robust Infineon coreless transformer technology to provide bi-directional signal transfer across the galvanic isolation barrier. The compact package design and high level of feature integration save valuable PCB space and system cost, while pre-configured settings reduce design efforts.
For SiC-MOSFETs up to 1200 V
Propagation delay 60 ns typical
Redundant DESAT and OCP protection
Gate and output stage monitoring