Infineon MOSFET Gate Driver, 290 mA 8-Pin 20V, SOIC

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TWD38,500.00

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TWD40,425.00

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  • 2026年12月07日 發貨
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2500 - 10000TWD15.40TWD38,500.00
12500 +TWD14.90TWD37,250.00

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RS庫存編號:
226-6193
製造零件編號:
IRS2118STRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Fall Time

65ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

75ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.75mm

Length

5mm

Standards/Approvals

No

Series

IRS

Mount Type

Surface

Automotive Standard

No

The Infineon IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20V

Undervoltage lockout

CMOS Schmitt-triggered inputs with pull-down

Output in phase with input

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