Infineon IR21531STRPBF MOSFET Gate Driver 8-Pin 600 V, SOIC
- RS庫存編號:
- 226-6157
- Distrelec 貨號:
- 304-39-410
- 製造零件編號:
- IR21531STRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 包，共 5 件）*
TWD207.00
(不含稅)
TWD217.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 90 件準備從其他地點送貨
- 加上 165 件從 2026年1月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD41.40 | TWD207.00 |
* 參考價格
- RS庫存編號:
- 226-6157
- Distrelec 貨號:
- 304-39-410
- 製造零件編號:
- IR21531STRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 80ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 80ns | |
| Minimum Supply Voltage | 15.6V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Width | 3.99 mm | |
| Length | 4.98mm | |
| Series | IR21531(D)(S) & (PbF) | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 80ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 80ns | ||
Minimum Supply Voltage 15.6V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Width 3.99 mm | ||
Length 4.98mm | ||
Series IR21531(D)(S) & (PbF) | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon IR21531S are an improved version of th popular IR2155 and IR2151 gate driver ICs and in corporates a high voltage half bridge gate driver with a front end oscillator similar to the CMOS 555 timer. A shutdown feature has been designed to the Ct pin, so that both gate driver outputs can be disabled using a low voltage control signal. Noise immunity has been improved significantly both by lowering the peak di/dt of the gate driver, and by increasing the undervoltage lockout hyster to 1V.
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Also available LEAD-FREE