Infineon MOSFET Gate Driver 2, 360 mA 8-Pin 600V, DSO
- RS庫存編號:
- 226-6032
- 製造零件編號:
- 2ED2304S06FXUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD59,500.00
(不含稅)
TWD62,475.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD23.80 | TWD59,500.00 |
| 12500 + | TWD23.30 | TWD58,250.00 |
* 參考價格
- RS庫存編號:
- 226-6032
- 製造零件編號:
- 2ED2304S06FXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 360mA | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 40ns | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 48ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED2304S06F | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Length | 5mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver | ||
Output Current 360mA | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 40ns | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 48ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED2304S06F | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Length 5mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon 2ED2304S06F Series Gate Driver, 10V Minimum Supply Voltage, 600V Maximum Supply Voltage - 2ED2304S06FXUMA1
This gate driver controls MOSFET Gates in high-voltage power circuits, providing dual-channel switching capability for drive tasks across a wide supply range. It is intended for surface-mounted use in Compact power-electronics designs where moderate drive current and fast switching transitions are required.
Features and Benefits:
• Dual outputs delivering discrete gate control for two transistors
• 360mA output current enabling robust gate charging and discharging
• Operates from 10V supply to support low-voltage drive rails
• Withstands up to 600V for high-voltage switching applications
• Fast rise time 48ns improving turn-on speed and switching performance
• Fall time 40ns reducing turn-off transition losses and ringing
• 360mA output current enabling robust gate charging and discharging
• Operates from 10V supply to support low-voltage drive rails
• Withstands up to 600V for high-voltage switching applications
• Fast rise time 48ns improving turn-on speed and switching performance
• Fall time 40ns reducing turn-off transition losses and ringing
Applications
• Suitable for half-bridge and push-pull inverter stages
• Ideal for high-voltage switch networks in power converters
• Used with MOSFETs in industrial motor drive systems
• Can be used for isolated gate-driver front-ends with transformers
• Used for Compact power modules where board space is limited
• Ideal for high-voltage switch networks in power converters
• Used with MOSFETs in industrial motor drive systems
• Can be used for isolated gate-driver front-ends with transformers
• Used for Compact power modules where board space is limited
What temperature range can it tolerate during operation?
It is specified to function from -40°C up to a maximum operating temperature of 125°C.
What package and board mounting should be used for Compact layouts?
The component is supplied in an 8-pin DSO package intended for surface-mount assembly with a footprint of 4mm width by 5mm length.
How many driver channels and outputs does it provide for circuit design?
The device contains two driver channels and provides two separate outputs for independent gate switching.
Does it comply with environmental restrictions for materials?
The unit meets RoHS requirements for restricted substances.
What switching device type is it designed to drive?
It is configured specifically as a MOSFET gate driver for controlling MOSFET devices.
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