Infineon 2ED2183S06FXUMA1 MOSFET Gate Driver 2, 2.5 A 8-Pin 20 V, DSO
- RS庫存編號:
- 226-6031
- 製造零件編號:
- 2ED2183S06FXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 包，共 5 件）*
TWD184.00
(不含稅)
TWD193.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,500 件從 2026年1月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD36.80 | TWD184.00 |
* 參考價格
- RS庫存編號:
- 226-6031
- 製造零件編號:
- 2ED2183S06FXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Output Current | 2.5A | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 3.9 mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Height | 1.72mm | |
| Series | 2ED2183S06F | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Output Current 2.5A | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 3.9 mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Height 1.72mm | ||
Series 2ED2183S06F | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2183S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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