Infineon MOSFET Gate Driver 2, 6 A 8-Pin 17 V, DSO
- RS庫存編號:
- 226-6017
- 製造零件編號:
- 1EDC60I12AHXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD59,100.00
(不含稅)
TWD62,060.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD59.10 | TWD59,100.00 |
| 5000 + | TWD57.30 | TWD57,300.00 |
* 參考價格
- RS庫存編號:
- 226-6017
- 製造零件編號:
- 1EDC60I12AHXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Output Current | 6A | |
| Pin Count | 8 | |
| Fall Time | 9ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 15V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 2.65mm | |
| Length | 7.6mm | |
| Standards/Approvals | No | |
| Series | 1EDC60I12AH | |
| Width | 6.4 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Output Current 6A | ||
Pin Count 8 | ||
Fall Time 9ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 10ns | ||
Minimum Supply Voltage 15V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 2.65mm | ||
Length 7.6mm | ||
Standards/Approvals No | ||
Series 1EDC60I12AH | ||
Width 6.4 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 1EDCxxI12AH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output current up to 10 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold level to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the coreless transformer technology.
Single channel isolated IGBT driver
For 600 V/650 V/1200 V IGBTs, MOSFETs and SiC MOSFETs
Up to 10 A typical peak current at rail-to-rail outputs
Separate source and sink output
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