Infineon 1EDF5673KXUMA1 MOSFET Gate Driver 1, 8 A 13-Pin 3.5 V, TFLGA
- RS庫存編號:
- 222-4761
- 製造零件編號:
- 1EDF5673KXUMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD284.00
(不含稅)
TWD298.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,985 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD56.80 | TWD284.00 |
| 10 - 95 | TWD55.40 | TWD277.00 |
| 100 - 245 | TWD54.20 | TWD271.00 |
| 250 - 495 | TWD52.60 | TWD263.00 |
| 500 + | TWD51.00 | TWD255.00 |
* 參考價格
- RS庫存編號:
- 222-4761
- 製造零件編號:
- 1EDF5673KXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 13 | |
| Fall Time | 19ns | |
| Package Type | TFLGA | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 3.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Height | 2.35mm | |
| Series | 1EDF5673F | |
| Width | 7.5 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 13 | ||
Fall Time 19ns | ||
Package Type TFLGA | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 3.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Height 2.35mm | ||
Series 1EDF5673F | ||
Width 7.5 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon single-channel galvanic ally isolated gate driver IC 1EDF5673K is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation
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