Infineon IR35412MTRPBFAUMA1 MOSFET Gate Driver, 50 A 16 V, PQFN

The Infineon integrated power stage combine the most advanced low voltage MOSFET technology with latest driver design. This integration of driver technology, FET technology and package technology also demonstrates the powerful combination of Infineon and International Rectifier’s capabilities. The dual edge trim dead time leads to a significant improvement in peak efficiency. The internal MOSFET RDS(on) current sensing (via dedicated Kelvin GND connection) with integrated temperature compensation achieves superior current sense accuracy versus inductor DCR sense methods.

Small 5 x 6 x 0.9 mm³ overmolded PQFN package, 0.45 mm pitch