STMicroelectronics MOSFET Gate Driver 1, 20 A 2-Pin 40 V, TO-263
- RS庫存編號:
- 190-4940
- 製造零件編號:
- VNB14NV04TR-E
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 卷，共 1000 件）*
TWD55,700.00
(不含稅)
TWD58,480.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 7,000 件從 2026年1月26日 起發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD55.70 | TWD55,700.00 |
| 5000 + | TWD54.10 | TWD54,100.00 |
* 參考價格
- RS庫存編號:
- 190-4940
- 製造零件編號:
- VNB14NV04TR-E
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 2 | |
| Package Type | TO-263 | |
| Fall Time | 30μs | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 30μs | |
| Minimum Supply Voltage | 40V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 40V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 2 | ||
Package Type TO-263 | ||
Fall Time 30μs | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 30μs | ||
Minimum Supply Voltage 40V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 40V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The STMicroelectronics VNB10N07 are monolithic device made using VI Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
ESD protection
Direct Access to the gate of the power MOSFET
Linear current limitation
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