Microchip MCP1407T-E/SN, Dual 2, 6 A 8-Pin 18V, SOIC
- RS庫存編號:
- 649-450P
- 製造零件編號:
- MCP1407T-E/SN
- 製造商:
- Microchip
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可享批量折扣
查看批量定價選項小計 50 件 (按連續帶提供)*
TWD2,100.00
(不含稅)
TWD2,205.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,275 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 50 - 245 | TWD42.00 |
| 250 - 495 | TWD37.80 |
| 500 + | TWD29.80 |
* 參考價格
- RS庫存編號:
- 649-450P
- 製造零件編號:
- MCP1407T-E/SN
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Gate Driver | |
| Output Current | 6A | |
| Pin Count | 8 | |
| Fall Time | 20ns | |
| Package Type | SOIC | |
| Driver Type | Dual | |
| Number of Outputs | 1 | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 18V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 18V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 3mm | |
| Standards/Approvals | ESD 2 kV (HBM), 400V (MM) | |
| Series | MCP1406/07 | |
| Mount Type | Surface, Through Hole | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Gate Driver | ||
Output Current 6A | ||
Pin Count 8 | ||
Fall Time 20ns | ||
Package Type SOIC | ||
Driver Type Dual | ||
Number of Outputs 1 | ||
Rise Time 40ns | ||
Minimum Supply Voltage 18V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 18V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 3mm | ||
Standards/Approvals ESD 2 kV (HBM), 400V (MM) | ||
Series MCP1406/07 | ||
Mount Type Surface, Through Hole | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip Buffers and MOSFET gate drivers feature a single-output with 6 A peak drive current capability, low shoot-through current, matched rise and fall times and propagation delay times. These devices are pin-compatible and are improved MOSFET drivers. The gate drivers can easily charge and discharge 2500 pF gate capacitance in under 20 ns, provide low enough impedances (in both the ON and OFF states) to ensure that intended state of the MOSFETs will not be affected, even by large transients.
Low Shoot-Through and Cross-Conduction Current in Output Stage
4.5 V to 18 V
Matched Rise and Fall Times
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