Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD

RS庫存編號:: 351-898
製造零件編號:: FF1MR12MM1HB11BPSA1
製造商:: Infineon

Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD

小計（1 件）*

TWD35,343.00

(不含稅)

TWD37,110.15

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單位	每單位
1 +	TWD35,343.00

* 參考價格

RS庫存編號:: 351-898
製造零件編號:: FF1MR12MM1HB11BPSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Product Type	Gate Driver Module
	Output Current	420A
	Package Type	AG-ECONOD
	Fall Time	77ns
	Driver Type	MOSFET
	Rise Time	261ns
	Minimum Supply Voltage	10V
	Maximum Supply Voltage	23V
	Number of Drivers	2
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Series	FF1MR12MM1H_B11
	Standards/Approvals	IEC 60749, IEC 60747, IEC 60068
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type Gate Driver Module
	Output Current 420A
	Package Type AG-ECONOD
	Fall Time 77ns
	Driver Type MOSFET
	Rise Time 261ns
	Minimum Supply Voltage 10V
	Maximum Supply Voltage 23V
	Number of Drivers 2
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Series FF1MR12MM1H_B11
	Standards/Approvals IEC 60749, IEC 60747, IEC 60068
	Automotive Standard No

Datasheet - FF1MR12MM1HB11BPSA1

COO (Country of Origin):: HU

The Infineon EconoDUAL 3 CoolSiC MOSFET half bridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and Press FIT contact technology. Also available with pre-applied Thermal Interface Material or with wave structure on the backside of the base plate for direct liquid cooling.

Low switching losses

Superior gate oxide reliability

Higher gate threshold voltage

Higher power output

Robust integrated body diode

High cosmic ray robustness

High speed switching module

Screw power terminals

Integrated NTC temperature sensor

Isolated baseplate

Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD

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