Infineon 64 kB Serial-I2C Serial (I2C) Automotive FRAM 8-Pin SOIC-8
- RS庫存編號:
- 273-7381
- 製造零件編號:
- FM24CL64B-DG
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD110.00
(不含稅)
TWD115.50
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD110.00 |
| 10 - 24 | TWD98.00 |
| 25 - 49 | TWD97.00 |
| 50 - 99 | TWD94.00 |
| 100 + | TWD87.00 |
* 參考價格
- RS庫存編號:
- 273-7381
- 製造零件編號:
- FM24CL64B-DG
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Serial (I2C) Automotive FRAM | |
| Memory Size | 64kB | |
| Organisation | 8k x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Number of Words | 8K | |
| Minimum Operating Temperature | 40°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 3V | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Serial (I2C) Automotive FRAM | ||
Memory Size 64kB | ||
Organisation 8k x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Number of Words 8K | ||
Minimum Operating Temperature 40°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 3V | ||
Automotive Standard AEC-Q100 Grade 1 | ||
The Infineon FRAM is a 64 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
AEC Q100 Grade 1 compliant
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
相關連結
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