可享批量折扣
小計(1 件)*
TWD1,634.00
(不含稅)
TWD1,715.70
(含稅)
添加 1 件 件可免費送貨
有庫存
- 加上 38 件從 2026年2月23日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 49 | TWD1,634.00 |
| 50 + | TWD1,601.00 |
* 參考價格
- RS庫存編號:
- 273-5335
- 製造零件編號:
- FM28V100-TGTR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 1MB | |
| Organisation | 128k x 8 | |
| Data Bus Width | 8bit | |
| Package Type | TSOP | |
| Pin Count | 32 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Minimum Supply Voltage | 3V | |
| Minimum Operating Temperature | 80°C | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 1MB | ||
Organisation 128k x 8 | ||
Data Bus Width 8bit | ||
Package Type TSOP | ||
Pin Count 32 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Minimum Supply Voltage 3V | ||
Minimum Operating Temperature 80°C | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard AEC-Q100 | ||
The Infineon FRAM Memory is a 128K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low voltage operation
Low power consumption
Superior to battery backed SRAM modules
Superior for moisture and shock with vibration
相關連結
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