Infineon NOR 256 MB SPI Flash Memory 24-Pin BGA, S25FL256LAGBHV020

RS庫存編號:: 184-0071
製造零件編號:: S25FL256LAGBHV020
製造商:: Infineon

Infineon NOR 256 MB SPI Flash Memory 24-Pin BGA, S25FL256LAGBHV020

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TWD225.76

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RS庫存編號:: 184-0071
製造零件編號:: S25FL256LAGBHV020
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Memory Size	256MB
	Product Type	Flash Memory
	Interface Type	SPI
	Package Type	BGA
	Pin Count	24
	Organisation	32M x 8 Bit
	Mount Type	Surface
	Maximum Clock Frequency	133MHz
	Cell Type	NOR
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Timing Type	Synchronous
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	105°C
	Length	6mm
	Standards/Approvals	No
	Height	0.95mm
	Width	6 mm
	Maximum Random Access Time	8ns
	Series	S25FL256L
	Number of Words	32M
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8

	選取全部
	品牌 Infineon
	Memory Size 256MB
	Product Type Flash Memory
	Interface Type SPI
	Package Type BGA
	Pin Count 24
	Organisation 32M x 8 Bit
	Mount Type Surface
	Maximum Clock Frequency 133MHz
	Cell Type NOR
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Timing Type Synchronous
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 105°C
	Length 6mm
	Standards/Approvals No
	Height 0.95mm
	Width 6 mm
	Maximum Random Access Time 8ns
	Series S25FL256L
	Number of Words 32M
	Automotive Standard AEC-Q100
	Number of Bits per Word 8

COO (Country of Origin):: US

Serial Peripheral Interface (SPI) with Multi-I/O

Clock polarity and phase modes 0 and 3

Double Data Rate (DDR) option

Quad peripheral Interface (QPI) option

Extended Addressing: 24- or 32-bit address options

Serial Command subset and footprint compatible with S25FL-A, S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI families

Multi I/O Command subset and footprint compatible with S25FL-P, S25FL-S and S25FS-S SPI families

Read

Commands: Normal, Fast, Dual I/O, Quad I/O, DualO,QuadO, DDR Quad I/O.

Modes: Burst Wrap, Continuous (XIP), QPI

Serial Flash Discoverable Parameters (SFDP) for configuration information.

Program Architecture

256 Bytes Page Programming buffer

3.0 V FL-L Flash Memory

Program suspend and resume

Erase Architecture

Uniform 4 KB Sector Erase

Uniform 32 KB Half Block Erase

Uniform 64 KB Block Erase

Chip erase

Erase suspend and resume

100,000 Program/Erase Cycles, minimum

20 Year Data Retention, minimum

Security features

Status and Configuration Register Protection

Four Security Regions of 256 bytes each outside the main

Flash array

Legacy Block Protection: Block range

Individual and Region Protection

Individual Block Lock: Volatile individual Sector/Block

Pointer Region: Non-Volatile Sector/Block range

Power Supply Lock-down, Password, or Permanent protection of Security Regions 2 and 3 and Pointer Region

Technology

65 nm Floating Gate Technology

Single Supply Voltage with CMOS I/O

2.7 V to 3.6 V

Packages (all Pb-free)

8-pin SOIC 208 mil (SOC008) — S25FL128L only

WSON 5 x 6 mm (WND008) — S25FL128L only

WSON 6 x 8 mm (WNG008) — S25FL256L only

16-pin SOIC 300 mil (SO3016)

BGA-24 6 x 8 mm

5 x 5 ball (FAB024) footprint

4 x 6 ball (FAC024) footprint

Infineon NOR 256 MB SPI Flash Memory 24-Pin BGA, S25FL256LAGBHV020

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