Microchip AT25M01-SSHM-B, 1 MB EEPROM, 80 ns 8-Pin SOIC SPI
- RS庫存編號:
- 236-8826
- 製造零件編號:
- AT25M01-SSHM-B
- 製造商:
- Microchip
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TWD249.00
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TWD261.45
(含稅)
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- 加上 50 件從 2026年2月23日 起發貨
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|---|---|---|
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| 10 + | TWD49.00 | TWD245.00 |
* 參考價格
- RS庫存編號:
- 236-8826
- 製造零件編號:
- AT25M01-SSHM-B
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Memory Size | 1MB | |
| Product Type | EEPROM | |
| Interface Type | SPI | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Clock Frequency | 20MHz | |
| Organisation | 128 x 8 bit | |
| Minimum Supply Voltage | 1.7V | |
| Maximum Supply Voltage | 5.5V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Height | 1.5mm | |
| Series | AT25M0 | |
| Supply Current | 10mA | |
| Data Retention | 100year | |
| Automotive Standard | No | |
| Number of Words | 128 | |
| Maximum Random Access Time | 80ns | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Memory Size 1MB | ||
Product Type EEPROM | ||
Interface Type SPI | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Clock Frequency 20MHz | ||
Organisation 128 x 8 bit | ||
Minimum Supply Voltage 1.7V | ||
Maximum Supply Voltage 5.5V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Height 1.5mm | ||
Series AT25M0 | ||
Supply Current 10mA | ||
Data Retention 100year | ||
Automotive Standard No | ||
Number of Words 128 | ||
Maximum Random Access Time 80ns | ||
The Microchip 1,048,576 bits of serial electrically erasable and programmable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low‑power and low‑voltage operation are essential.
128K x 8 bit 1 Mbit
Supports SPI modes 0 and 3
Up to 20 MHz clock frequency
Self-timed erase and write cycles 5 ms maximum
Read current 10 mA maximum at 20 MHz
Write current 7 mA maximum at 5 V
Standby current 3 μA maximum at 1.7 V, 5 μA maximum at 5 V
Block write protection protect 1/4, 1/2 or entire array
More than 1 million erase/write cycles
Data retention 100 years
Industrial -40 °C to 85 °C
Factory programming available
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