Microchip, 64 kB Parallel EEPROM, 120 ns 28-Pin SOIC Parallel
- RS庫存編號:
- 177-1673P
- 製造零件編號:
- AT28HC64BF-12SU
- 製造商:
- Microchip
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享受批量購買折扣
查看批量定價選項小計 8 件 (以管提供)*
TWD1,872.00
(不含稅)
TWD1,965.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 48 件從 2026年11月09日 起發貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 8 + | TWD234.00 | - |
* 參考價格
- RS庫存編號:
- 177-1673P
- 製造零件編號:
- AT28HC64BF-12SU
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Parallel EEPROM | |
| Memory Size | 64kB | |
| Interface Type | Parallel | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 28 | |
| Organisation | 8K x 8 bit | |
| Maximum Clock Frequency | 5MHz | |
| Minimum Supply Voltage | 4.5V | |
| Maximum Supply Voltage | 5.5V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 17.9mm | |
| Series | AT28HC64BF | |
| Standards/Approvals | No | |
| Width | 10.3mm | |
| Height | 2.8mm | |
| Number of Words | 8192 | |
| Data Retention | 10year | |
| Supply Current | 40mA | |
| Maximum Random Access Time | 120ns | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Parallel EEPROM | ||
Memory Size 64kB | ||
Interface Type Parallel | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 28 | ||
Organisation 8K x 8 bit | ||
Maximum Clock Frequency 5MHz | ||
Minimum Supply Voltage 4.5V | ||
Maximum Supply Voltage 5.5V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 17.9mm | ||
Series AT28HC64BF | ||
Standards/Approvals No | ||
Width 10.3mm | ||
Height 2.8mm | ||
Number of Words 8192 | ||
Data Retention 10year | ||
Supply Current 40mA | ||
Maximum Random Access Time 120ns | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time Self-Timed Erase and Write Cycles
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
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