Microchip 24FC02-E/ST, 2 kB EEPROM, 450 ns 8-Pin TSSOP 2 Wire I2C
- RS庫存編號:
- 734-456
- 製造零件編號:
- 24FC02-E/ST
- 製造商:
- Microchip
N
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小計（1 盒，共 1100 件）*
TWD13,750.00
(不含稅)
TWD14,432.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 1100 + | TWD12.50 | TWD13,750.00 |
* 參考價格
- RS庫存編號:
- 734-456
- 製造零件編號:
- 24FC02-E/ST
- 製造商:
- Microchip
規格
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法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | EEPROM | |
| Memory Size | 2kB | |
| Interface Type | 2 Wire I2C | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Clock Frequency | 1MHz | |
| Organisation | 256 x 8 | |
| Minimum Supply Voltage | 1.7V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 24FC02 | |
| Data Retention | 200year | |
| Maximum Random Access Time | 450ns | |
| Number of Words | 256 | |
| Supply Current | 1mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type EEPROM | ||
Memory Size 2kB | ||
Interface Type 2 Wire I2C | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Clock Frequency 1MHz | ||
Organisation 256 x 8 | ||
Minimum Supply Voltage 1.7V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 24FC02 | ||
Data Retention 200year | ||
Maximum Random Access Time 450ns | ||
Number of Words 256 | ||
Supply Current 1mA | ||
Automotive Standard No | ||
The Microchip EEPROM offers reliable and efficient data storage for various electronic applications. Its primary function is to provide flexible serial EEPROM memory solutions for system designs requiring non-volatile data retention.
Delivers high-speed serial communication for quick data transfers
Supports a wide operating voltage range for versatile application usage
Features a robust memory architecture designed for endurance and reliability
Includes support for both read and write operations, ensuring data flexibility
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