STMicroelectronics M24C08-GCT6TP/T, 1 kB EEPROM 4-Pin WLCSP I2C
- RS庫存編號:
- 719-618
- 製造零件編號:
- M24C08-GCT6TP/T
- 製造商:
- STMicroelectronics
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此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2500 件）*
TWD11,000.00
(不含稅)
TWD11,550.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 + | TWD4.40 | TWD11,000.00 |
* 參考價格
- RS庫存編號:
- 719-618
- 製造零件編號:
- M24C08-GCT6TP/T
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Memory Size | 1kB | |
| Product Type | EEPROM | |
| Interface Type | I2C | |
| Package Type | WLCSP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Clock Frequency | 1MHz | |
| Organisation | 1K x 8 | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 1.8V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Width | 0.7mm | |
| Series | M24C08 | |
| Height | 0.3mm | |
| Length | 1mm | |
| Supply Current | 5mA | |
| Data Retention | 200year | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Memory Size 1kB | ||
Product Type EEPROM | ||
Interface Type I2C | ||
Package Type WLCSP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Clock Frequency 1MHz | ||
Organisation 1K x 8 | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 1.8V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Width 0.7mm | ||
Series M24C08 | ||
Height 0.3mm | ||
Length 1mm | ||
Supply Current 5mA | ||
Data Retention 200year | ||
- COO (Country of Origin):
- SG
The STMicroelectronics 8-Kbit I²C-compatible EEPROM (electrically erasable programmable read-only memory) organized as 1 K x 8 bits. It can operate with a supply voltage of 1.8 V ± 5% over an ambient temperature range of -40 °C/+85 °C, with a maximum clock frequency of 400 kHz. The product offers the I/Os compatible with 1.2 V, and is delivered in wafer level chip scale packaging 4-ball.
Enhanced ESD/latch-up protection 3 kV (HBM)
More than 4 million write cycles
More than 200-year data retention
Hardware write protection of the whole memory array
Random and sequential read modes
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