Nexperia PBHV8118T,215 Transistor, 1 A NPN, 180 V, 3-Pin SOT-23
- RS庫存編號:
- 816-0649
- 製造零件編號:
- PBHV8118T,215
- 製造商:
- Nexperia
可享批量折扣
小計（1 包，共 30 件）*
TWD255.00
(不含稅)
TWD267.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 30 - 720 | TWD8.50 | TWD255.00 |
| 750 - 1470 | TWD8.40 | TWD252.00 |
| 1500 + | TWD8.20 | TWD246.00 |
* 參考價格
- RS庫存編號:
- 816-0649
- 製造零件編號:
- PBHV8118T,215
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 180V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 400V | |
| Maximum Power Dissipation Pd | 300mW | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | RoHS | |
| Length | 6.7mm | |
| Series | PBHV8118T | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 180V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 400V | ||
Maximum Power Dissipation Pd 300mW | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 100MHz | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals RoHS | ||
Length 6.7mm | ||
Series PBHV8118T | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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