ROHM EMH53T2R Digital Transistor, 50 V NPN + NPN Surface SOT-563, 6-Pin
- RS庫存編號:
- 237-4324
- 製造零件編號:
- EMH53T2R
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 50 件）*
TWD345.00
(不含稅)
TWD362.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 7,900 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 50 | TWD6.90 | TWD345.00 |
| 100 - 450 | TWD6.80 | TWD340.00 |
| 500 - 950 | TWD6.70 | TWD335.00 |
| 1000 - 2450 | TWD6.60 | TWD330.00 |
| 2500 + | TWD6.40 | TWD320.00 |
* 參考價格
- RS庫存編號:
- 237-4324
- 製造零件編號:
- EMH53T2R
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Digital Transistor | |
| Package Type | SOT-563 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Transistor Polarity | NPN + NPN | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum DC Current Gain hFE | 100 | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Series | EMH53 | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Height | 0.55mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Digital Transistor | ||
Package Type SOT-563 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Transistor Polarity NPN + NPN | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum DC Current Gain hFE 100 | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Series EMH53 | ||
Length 1.7mm | ||
Width 1.7mm | ||
Height 0.55mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM EMH53 series NNP/NNP dual digital transistor has SOT-563 package. It has supply voltage of 50V and output collector current of 100mA.
Surface mount
Equivalent to DTC043T
Transistor elements are independent, eliminating Interface
Mounting cost and area can be cut in half
Storage temperature range between -55°C and 150°C
Power dissipation of 0.15W