Toshiba TBC847B,LM(T Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23
- RS庫存編號:
- 236-3587
- 製造零件編號:
- TBC847B,LM(T
- 製造商:
- Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 500 件)*
TWD650.00
(不含稅)
TWD680.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 40,500 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 500 - 500 | TWD1.30 | TWD650.00 |
| 1000 - 1000 | TWD1.20 | TWD600.00 |
| 1500 - 2500 | TWD1.20 | TWD600.00 |
| 3000 + | TWD1.20 | TWD600.00 |
* 參考價格
- RS庫存編號:
- 236-3587
- 製造零件編號:
- TBC847B,LM(T
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 200mA | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Maximum Power Dissipation Pd | 320mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 200 | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 2.9mm | |
| Height | 0.95mm | |
| Series | TBC847 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 200mA | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V | ||
Maximum Power Dissipation Pd 320mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 200 | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 2.9mm | ||
Height 0.95mm | ||
Series TBC847 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.
Storage temperature range −55 to 150 °C
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