onsemi FDG6321C Digital Transistor Surface SC-70, 6-Pin
- RS庫存編號:
- 186-8443
- 製造零件編號:
- FDG6321C
- 製造商:
- onsemi
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- RS庫存編號:
- 186-8443
- 製造零件編號:
- FDG6321C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Power Dissipation Pd | 300mW | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Series | FDG6321C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Power Dissipation Pd 300mW | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Series FDG6321C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Automotive Standard No | ||
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
N-Ch
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.