onsemi MJD2955G Transistor, -10 A PNP, -60 V, 3-Pin DPAK
- RS庫存編號:
- 186-8076
- 製造零件編號:
- MJD2955G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD512.50
(不含稅)
TWD538.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 200 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 100 | TWD20.50 | TWD512.50 |
| 125 + | TWD20.20 | TWD505.00 |
* 參考價格
- RS庫存編號:
- 186-8076
- 製造零件編號:
- MJD2955G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 70V dc | |
| Maximum Transition Frequency ft | 500kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 5 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 20W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | MJD2955 | |
| Standards/Approvals | No | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 70V dc | ||
Maximum Transition Frequency ft 500kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 5 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 20W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series MJD2955 | ||
Standards/Approvals No | ||
Width 2.38mm | ||
Length 6.73mm | ||
Height 10.41mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- VN
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These are PbFree Packages
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