onsemi MJH11019G Digital Transistor, -200 V PNP Through Hole SOT-93, 3-Pin
- RS庫存編號:
- 186-7418
- 製造零件編號:
- MJH11019G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD3,570.00
(不含稅)
TWD3,748.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 150 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD119.00 | TWD3,570.00 |
| 60 - 90 | TWD116.40 | TWD3,492.00 |
| 120 + | TWD114.10 | TWD3,423.00 |
* 參考價格
- RS庫存編號:
- 186-7418
- 製造零件編號:
- MJH11019G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-93 | |
| Maximum Collector Emitter Voltage Vceo | -200V | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 150V | |
| Minimum DC Current Gain hFE | 100 | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 20.35mm | |
| Width | 4.9mm | |
| Length | 15.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-93 | ||
Maximum Collector Emitter Voltage Vceo -200V | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 150V | ||
Minimum DC Current Gain hFE 100 | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 20.35mm | ||
Width 4.9mm | ||
Length 15.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.
High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)
Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb-Free Packages are Available