onsemi Digital Transistor, 450 V N-Channel 23 A Surface, 2-Pin
- RS庫存編號:
- 186-7394
- 製造零件編號:
- FGD3245G2-F085
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計(1 卷,共 2500 件)*
TWD109,500.00
(不含稅)
TWD114,975.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月10日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD43.80 | TWD109,500.00 |
| 12500 + | TWD42.50 | TWD106,250.00 |
* 參考價格
- RS庫存編號:
- 186-7394
- 製造零件編號:
- FGD3245G2-F085
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Transistor Polarity | N-Channel | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Continuous Collector Current Ic | 23A | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 175°C | |
| Series | EcoSPARK-2 | |
| Width | 8.51mm | |
| Standards/Approvals | RoHS | |
| Height | 2.26mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Transistor Polarity N-Channel | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Continuous Collector Current Ic 23A | ||
Pin Count 2 | ||
Maximum Operating Temperature 175°C | ||
Series EcoSPARK-2 | ||
Width 8.51mm | ||
Standards/Approvals RoHS | ||
Height 2.26mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.
SCIS Energy = 320 mJ at TJ = 25°C
Logic Level Gate Drive
Low Saturation Voltage
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