onsemi 2SA2210-1E Transistor, -20 A PNP, -50 V, 3-Pin TO-220
- RS庫存編號:
- 184-4925
- 製造零件編號:
- 2SA2210-1E
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD306.00
(不含稅)
TWD321.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 25 件從 2026年5月04日 起發貨
- 加上 20 件從 2026年5月11日 起發貨
- 加上 50 件從 2026年6月17日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD61.20 | TWD306.00 |
| 15 + | TWD59.60 | TWD298.00 |
* 參考價格
- RS庫存編號:
- 184-4925
- 製造零件編號:
- 2SA2210-1E
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -20A | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -50V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | -6V | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | PNP | |
| Maximum Transition Frequency ft | 1MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | 2SA2210 | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Height | 28.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -20A | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -50V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO -6V | ||
Maximum Power Dissipation Pd 30W | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity PNP | ||
Maximum Transition Frequency ft 1MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series 2SA2210 | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Height 28.85mm | ||
Automotive Standard No | ||
2SA2210 is a Bipolar Transistor, -50V, -20A, Low VCE(sat), PNP TO-220F-3SG for High-Current Switching Applications.
Adoption of MBIT process
Large current capacitance
Low collector to emitter saturation voltage
High speed switching
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