onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218
- RS庫存編號:
- 184-4188
- 製造零件編號:
- BDV64BG
- 製造商:
- onsemi
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD2,313.00
(不含稅)
TWD2,428.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 330 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD77.10 | TWD2,313.00 |
| 150 + | TWD74.10 | TWD2,223.00 |
* 參考價格
- RS庫存編號:
- 184-4188
- 製造零件編號:
- BDV64BG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 1000 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 125W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 41.91mm | |
| Width | 5.3mm | |
| Series | BDV64B | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 1000 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 125W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 41.91mm | ||
Width 5.3mm | ||
Series BDV64B | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
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