onsemi 2N4922G Transistor, 3 A NPN, 60 V dc, 3-Pin TO-225
- RS庫存編號:
- 184-4147
- 製造零件編號:
- 2N4922G
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 盒，共 500 件）*
TWD7,550.00
(不含稅)
TWD7,930.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月19日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 500 - 500 | TWD15.10 | TWD7,550.00 |
| 1000 - 1500 | TWD14.80 | TWD7,400.00 |
| 2000 + | TWD14.50 | TWD7,250.00 |
* 參考價格
- RS庫存編號:
- 184-4147
- 製造零件編號:
- 2N4922G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | 60V dc | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Transition Frequency ft | 1MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3mm | |
| Series | 2N4922 | |
| Length | 7.8mm | |
| Height | 11.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo 60V dc | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Transition Frequency ft 1MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3mm | ||
Series 2N4922 | ||
Length 7.8mm | ||
Height 11.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.
Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation - PD = 30 W @ TC = 25°C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement of PNP 2N4918, 2N4919, 2N4920
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